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| 2. |
- Kabir, Mohammad, 1974, et al.
(author)
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Fabrication of individual, vertically aligned carbon nanofibres on metal substrates from prefabricated catalyst dots
- 2006
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In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 17:3, s. 790-794
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Journal article (peer-reviewed)abstract
- Carbon nanofibres (CNFs) of controlled diameter and length were grown on different metal substrates using plasma-enhanced chemical vapour deposition (PECVD). The diameter control of catalyst dots (and hence CNF diameter) was obtained by using the shot modulation technique in electron beam lithography. Catalyst dots of different sizes within arrays of different pitch were prepared and the dependence of the growth of vertically aligned CNFs on these parameters was studied for different metal underlayers. Good quality vertically aligned CNFs with a narrow length distribution were grown on Mo and W substrates. The structures grown on Nb substrates were significantly shorter for identical growth conditions and showed a lower nucleation rate. We demonstrate that through the shot modulation technique it is possible to control the diameter variation of CNFs from a single design geometry for the catalyst deposition. Individual VACNFs can be grown down to a pitch within the range 100–500 nm.
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| 3. |
- Kabir, Mohammad, 1974, et al.
(author)
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Plasma-enhanced chemical vapour deposition growth of carbon nanotubes on different metal underlayers
- 2005
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In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 16, s. 458-466
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Journal article (peer-reviewed)abstract
- One important requirement for future applications of carbon nanotube electronic devices is the ability to controllably grow carbon nanotubes on metal electrodes. Here we show that it is possible to grow small diameter (<10 nm) vertically aligned carbon nanotubes on different metal underlayers using plasma-enhanced chemical vapour deposition. A crucial component is the insertion of a thin silicon layer between the metal and the catalyst particle. The electrical integrity of the metal electrode layer after plasma treatment and the quality of the metals as interconnects are also investigated.
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| 4. |
- Morjan, Raluca Elena, 1976, et al.
(author)
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Selective growth of individual multiwalled carbon nanotubes
- 2004
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In: Current Applied Physics. - : Elsevier BV. - 1567-1739. ; 4:6, s. 591-594
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Journal article (peer-reviewed)abstract
- Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.
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| 5. |
- Yu, H.Y., et al.
(author)
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Current enhancement with alternating gate voltage in the Coulomb blockade regime of a single wall carbon nanotube
- 2004
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In: Applied Physics A. - : Springer Science and Business Media LLC. - 0947-8396 .- 1432-0630. ; 79, s. 1613-1615
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Journal article (peer-reviewed)abstract
- We investigated the current–voltage characteristics of a carbon nanotube in a single electron transistor structure with alternating gate voltage. A continuous current enhancement effect with increasing frequency of the applied gate voltage up to 13 MHz is reported. Assuming that I=nef, more than 1000 electrons are driven to flow across the source–drain channel at VDS=100 mV, 13 MHz of gate voltage (Vp-p=2 V) and T=1.8 K. The continuous current enhancement is explained by the broadening effect of the discrete energy levels of the finite-length carbon nanotube.
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